Search results for "Semiconductor nanostructures"

showing 2 items of 2 documents

An ab initio study of the polytypism in InP

2016

AbstractThe existence of polytypism in semiconductor nanostructures gives rise to the appearance of stacking faults which many times can be treated as quantum wells. In some cases, despite of a careful growth, the polytypism can be hardly avoided. In this work, we perform an ab initio study of zincblende stacking faults in a wurtzite InP system, using the supercell approach and taking the limit of low density of narrow stacking faults regions. Our results confirm the type II band alignment between the phases, producing a reliable qualitative description of the band gap evolution along the growth axis. These results show an spacial asymmetry in the zincblende quantum wells, that is expected …

MultidisciplinaryValence (chemistry)Materials scienceCondensed matter physicsBand gapmedia_common.quotation_subjectStackingAb initioSemiconductor nanostructures02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesAsymmetryArticle0103 physical sciences010306 general physics0210 nano-technologyQuantum wellmedia_commonWurtzite crystal structureScientific Reports
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Exciton Gas Compression and Metallic Condensation in a Single Semiconductor Quantum Wire

2008

4 páginas, 5 figuras.-- PACS numbers: 78.67.Lt, 71.30.+h, 71.35. -y.-- Comunicación presentada a la International Conference on the Physics of Semiconductors (ICPS) celebrada en Rio de Jqaneiro (Brasil/2008).

PhysicsPhase transitionPhotoluminescenceCondensed Matter - Mesoscale and Nanoscale PhysicsStrongly Correlated Electrons (cond-mat.str-el)Condensed matter physicsQuantum wireExcitonDimension (graph theory)CondensationNanowireFOS: Physical sciencesGeneral Physics and AstronomyInAs/InP quantum wiresSpace (mathematics)Condensed Matter - Strongly Correlated ElectronsSemiconductor nanostructuresMesoscale and Nanoscale Physics (cond-mat.mes-hall)Microphotoluminiscence
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